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All technical data presented represent typical results, unless stated otherwise as min/max values.
No guarantee is made that material will meet exactly the values shown.

Silicon Carbide-Silicon Nitride

Si3N4-SiC

Typical Technical Data:

 

Characterization Techniques

 

Specific Surface Area m2/g

40± 5

Argon absorption desorption (BET)
Average Particle Size, nm 50± 5

Calculated from SSA

Particle Shape Unregular TEM
Crystallographic Phases ß-SiC, X-ray amorphous Si3N4 XRD
Chemical Composition Si3N4- SiC min. 97,4
(SiC content in product 0-90 wt.%)
Chemical analysis
Impurities Free Si max 0,7 Chemical analysis
Free C max 0,1-0,9
(depends on SiC content)
Chemical analysis
O max 0,8 Neutron activation Analysis
Metallic Impurities Fe max 0,05 Chemical analysis
Ca max 0,05 Chemical analysis

Content of metallic impurities is determined by purity of raw material.

 

Production scale: Lab, Pilot, Commercial
Search tags: Nano, Nano powder, SiC/SiN

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