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Silicon Carbide-Silicon Nitride
| Si3N4-SiC |
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Typical Technical Data:
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Characterization Techniques
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| Specific Surface Area m2/g |
40 ± 5
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Argon absorption desorption (BET) |
| Average Particle Size, nm |
45 ± 5 |
Calculated from SSA
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| Particle Shape |
Unregular |
TEM |
| Crystallographic Phases |
ß-SiC, X-ray amorphous Si3N4 |
XRD |
| Chemical Composition |
Si3N4- SiC min. 97,4
(SiC content in product 0-90 wt.%) |
Chemical analysis |
| Impurities |
Free Si max 0,7 |
Chemical analysis |
Free C max 0,1-0,9
(depends on SiC content) |
Chemical analysis |
| O max 0,8 |
Neutron activation Analysis |
| Metallic Impurities |
Fe max 0,05 |
Chemical analysis |
| Ca max 0,05 |
Chemical analysis |
Content of metallic impurities is determined by purity of raw material.
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